FAQ

FeRAM stands for “Ferroelectric Random Access Memory” and is a nonvolatile memory that uses ferroelectric material for data storage. It has the characteristics of both ROM and RAM, and features high-speed write, high rewrite endurance (guaranteed multiple rewrite cycles), and low power consumption.
For a detailed explanation of FeRAM, please refer to the page “Reasons to Choose FeRAM”.

We have been supplying mass-produced FeRAM since 1999 and have abundant experience in mass production. Since the beginning of mass production, our products have been continuously adopted by our customers.
For details, please refer to the “Applications” page.

It is employed in applications requiring frequent data writing. Examples include OA equipment (counters and print records for MFPs), FA equipment (parameters and data logs for measurement and analysis equipment), financial terminals (transaction history), infrastructure measurement equipment (power meters), and car navigation and audio systems (resume data just before power-off). Please see the “Applications” page for a variety of other uses.

It is not difficult to use. Serial interface products can be used in the same way as existing serial EEPROMs and serial flash memories. Parallel interface products can be used in the same way as SRAMs with asynchronous interfaces.

Yes, they all refer to Ferroelectric Random Access Memory, which means ferroelectric memory.

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Yes, you can download it from the following link.

• Catalog
• Data Sheets
• White Papers

Yes, please contact our sales department or via our contact form. Please contact our sales department or via our contact form.

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Other suppliers exist.

Parallel FeRAM is equipped with an asynchronous SRAM interface and can be proposed as a replacement solution for SRAM. In fact, we have had customers who want to eliminate batteries for data retention adopt our FeRAM replacement solution. For more information, please contact our sales department or via our contact form.

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For pricing details, please contact our contracted distributors or our sales department or via our contact form.

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Yes, FeRAM's 8-pin package is package-compatible with EEPROMs, so it can replace them without any changes to the mounting board wiring or footprint.

FeRAM has a rewrite count of 1013 times (13th power of 10) and does not require wear leveling. Depending on the customer's application, FeRAM may be able to replace flash memory.

To cite a typical product line, the write speed of FeRAM is 150 ns, while EEPROM is 10 ms and flash memory is 10 μs. Compared to EEPROM, FeRAM is about 70,000 times faster. The reason for this is that EEPROM and flash memory require time-consuming “erase” operations such as byte and sector erase prior to write, while FeRAM does not require erase and can be written in layers like SRAM, resulting in faster write speed.

We refer to memory with serial bus interfaces (I2C and SPI) as serial memory. Serial bus is a communication method in which data is continuously input and output one bit at a time.
The I2C interface is an interface controlled by only two signal lines, “SDA” for address and data control and “SCL” for clock control. On the other hand, the SPI interface is an interface controlled by four signal lines: “SCK” for clock, “SI” for address and data input, “SO” for data output, and “CS” for chip select.

MRAM is a high-speed memory for writing data. However, due to its high write power consumption, it is prone to overheating. Additionally, as it is sensitive to magnetic interference, careful consideration is required when using it in industrial applications.
NVRAM requires external components like capacitors to retain data when the power is off. As a result, its BOM (Bill of Materials) cost can be higher than FeRAM.

No, it is not unlimited. The total number of write and read operations is the guaranteed number of rewrites.

No, it's not unlimited. FeRAM can guarantee minimum read/write endurance times (= read/write cycles guaranteed) in total of read times and write times.

FeRAM operates to automatically rewrite the read data when data is read. Therefore, the number of writes is counted even when reading.

No, it is not the total number of times across the entire chip.
Warranty coverage varies by product; please refer to the product-specific datasheet.

The data retention period also depends on the customer's operating temperature. For example, a product whose datasheet states “10 years (+85°C)” is a provision that guarantees written data for 10 years if the product is always used at a fixed temperature of 85°C. If the customer uses the product at a temperature below 85°C, such as 25°C or 60°C, the data retention period can be calculated to be 10 years or longer. If the customer's operating environment is below 85°C, such as 25°C or 60°C, it is possible to retain data for more than 10 years. For details, please refer to the data sheet of each product.

FeRAM is a memory that uses ferroelectric materials. While materials can be slightly affected by external magnetic fields, strong influences are mainly seen in ferromagnetic and antiferromagnetic materials such as Fe, Co, Ni, and Cr. Since FeRAM does not use these materials, it is theoretically not affected by external magnetic interference.

Only the products available on the "Product List" page, including Verilog models and IBIS models, can be provided. Please request them using the request form.

It has the same general-purpose interface (parallel/SPI/I2C) as other memories, so it can be used with general-purpose controllers and microcontrollers that support them.

For example, comparing power consumption of EEPROM and FeRAM (conditions of 2Mbit, SPI interface, 2Kbyte data write, 1sec, and 5MHz frequency), EEPROM consumes 5.80mJ and FeRAM consumes 0.46mJ. Therefore, FeRAM has one- thirteenth power consumption and 92% less power.

We are compliant. For more information, please check our “Environmental Compliance” site, which introduces our compliance with EU RoHS and China RoHS.

For more information, please visit our “Environmental Compliance” site.

For more information, please visit our “Environmental Compliance” site.

No, there is no conflict. Lead (Pb) content is less than 1,000ppm, thus conforming to RoHS Directive.

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ReRAM (resistive random access memory), also called resistance change memory, is a nonvolatile memory that stores data according to the difference in resistance of a metal oxide film sandwiched between electrodes.
By applying a voltage to the metal oxide film, the resistance is changed, and “0” and “1” data are recorded according to the difference between the high and low resistance states.
The read current is among the lowest in the industry, and the read endurance is unlimited, making this nonvolatile memory ideal for read-main applications.

The low readout current of 0.2 mA makes it ideal for applications that require frequent data readout. Hearing aids are one such application, and are used to frequently read out adjustment programs stored in memory in order to adjust the volume according to the situation.

The SPI interface is the same as that used for EEPROMs, etc., and can be easily used by simply programming according to the SPI communication standard.

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The products are manufactured on consignment by Nuvoton Technology Japan Corporation, which has more than five years of experience in prototype ReRAM and mass production of ReRAM-based microcontrollers.

Yes, please contact our sales department or via our contact form.

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Power is supplied wirelessly by UHF charged waves (RFID radio waves). In addition, the device can also supply power to an external device (electronic paper), making it battery-less (no batteries required).

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This function will be able to detect the ON/OFF status of multiple switches connected to the end of the LSI using radio signals and radio power from the reader/writer (R/W).
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If it is a low power consumption type with SPI I/F, it can be connected.
Please contact us via the inquiry form for details, as it depends on the type of operation.

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It is a display media with the same level of thinness and visibility as paper, and the display content can be rewritten. Unlike LCDs, it can display without backlight. Normally, power is required only when rewriting the display, and no power is needed to maintain the display. Therefore, it is characterized by low power consumption.

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The screen size is 2.9 inches with a 296-dot x 128-dot configuration.

It is equipped with 8 kByte memory (FeRAM).
About half (4 kByte) is used for e-paper image rewriting, while the other half (4 kByte) can be freely used as user memory.
Data that you do not want to display or do not need to display can be stored in the user memory.

In such situations where paper labels are conventionally used.
However, by using electronic paper tags, the labels can be rewritten automatically and used repeatedly, saving man-hours.
However, by using electronic paper tags, the labels can be rewritten automatically and used repeatedly, which leads to labor savings.
In addition, it can contribute to the promotion of paperless, decarbonization, carbon neutrality, SDGs, IT, and DX.

IP54.

A million times.

Radio Frequency IDentification (RFID) is an abbreviation for Radio Frequency IDentification, an automatic identification system that reads and writes individual information about people and objects stored in a medium called RFID through wireless communication.

Various certifications (CE, FCC, ISDE) have been obtained overseas.
It can be introduced if the frequencies conform to the radio laws of the countries in which they are used.

The UHF band (860 MHz to 960 MHz) is used.

Complies with EPC global C1 G2.

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It can be examined from the IC's imprint. For details, please refer to the “Imprint Diagram” in the datasheet.

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It is recommended to connect a bypass capacitor of about 0.1 μF between power supply and GND.

The NC (No Connect) pin is not connected to the silicon die in the package and can be connected to either floating (open) or VDD/VSS. However, if there is a description in the datasheet, please match it.

The PAD on the back side should be floating (open) or connected to VSS; connection to potentials other than VSS is not allowed.